16 GHz Integrated Oscillator Design with Active Elements in a Production Ready SiGe HBT MMIC Technology

This paper reports on the results gained on an oscillator incorporating active inductance and active capacitance concepts. The only concentrated passive reactances used are the MIM capacitors. With the goal of high output power and low area consumption, the analyzed circuit was realized in a compact 300 × 300 μm2 area. A layout-optimized version of a commercially available SiGe heterostructure bipolar transistor MMIC technology with relaxed lateral scaling of 1.2 μm has been used. This oscillator design provides a load independent oscillation condition provided by a cascode buffer stage. An output power of 12.5 dBm at 15.6 GHz is achieved.