A CMOS Compatible Power MOSFET for Low Voltage GHz Operation

This paper presents a high performance microwave lateral double-diffused MOS (LDMOS) transistor for low voltage applications. The device is manufactured in an ordinary CMOS process without any complex processing steps. The device has a current gain cut-off frequency, fT of 6.5 GHz and a power gain cut-off frequency, fMAX, of 14 GHz. The power-added efficiency is 45 % and the output power is 25 dBm for a device with 2 mm gate width at 1 GHz.