Three-Dimensional MMIC Interconnect Process using Photosensitive BCB and STO Capacitors

This paper presents a new three-dimensional (3-D) MMIC interconnect process using photosensitive BCB (Benzocyclobutene) interlevel dielectric and STO (SrTiO3) capacitors. This technology significantly reduces process turn-around-time (TAT) and chip size. It yields MMICs with wide frequency range because the low temperature process can be applied to InGaAs and InP devices as well as GaAs and Si devices. A 50 GHz-band amplifier is fabricated to demonstrate this technology.