Large-Signal Modelling of Millimetre-Wave HEMTs

A highly efficient physical HEMT model capable of characterizing the whole spectrum of HEMT device structures is presented. This has been used to predict DC, small and large-signal microwave performance. The model takes into consideration the parasitic MESFET conduction, quantum effects, DX centers, and trapping phenomena. Its unique formulation and efficiency make it suitable for the computer aided design of HEMT subsystems. A computationally efficient physically based S-parameters simulation technique is described. An equivalent circuit model is generated from physics based dynamic simulation. It can also be used to predict S-parameters and for indirect linking of the physical model to existing circuit analysis CAD tools. The physical large-signal model is applied to the analysis of a amplifier.