V-band MMIC mixers using AIGaAs/InGaAs/GaAs PM HFET

MMIC single gate cold mixers and dual gate mixers have been developed, fabricated and measured in V band. These MMIC microstrip mixers have been processed on 0.15 μm or 0.25 μm gate AIGaAs/InGaAs/GaAs PM-HFET technology. Specific non linear electrical models of single gate and dual gate transitors have been performed. A comparison of the performance for each MMIC is described. The SG cold mixer shows a conversion gain close to -7.5 dB and a compression power point beyond 11 dBm input power. The DG mixer exhibits a conversion gain of -3 dB and a LO to RF natural isolation larger than 30 dB. A back simulation has been made showing a good agreement between these experiment results and the non linear simulations.