Low frequency noise in FET devices operated under nonlinear conditions consequences on oscillator phase noise

FET low frequency noise is investigated in the presence of a microwave signal driving the device into nonlinear conditions. The influence of the microwave amplitude on the LF noise spectrum amplitude and shape is reported. The process of conversion of the low frequency noise into an oscillator phase noise is also analyzed using the pushing coefficient. It is emphasized that this technique may not hold in some special cases where pushing decreases to zero.