Large-signal MESFET model including trapping effects

A physics-based analytical MESFET model is presented. Substrate trapping is modelled, under large-signal conditions, with a simple differential equation which allows consistent description of the observed low-frequency "anomalies": frequency-dispersion of the small-signal parameters, drain-lag effect and hysteresis in the DC curves. Measured and calculated frequency dependence of the drain conductance and susceptance are compared and the implementation of the model in the circuit analysis program APLAC is discussed.