A monolithic 1-55 GHz HEMT distributed amplifier in coplanar waveguide technology

A single stage four section 1-55 GHz GaAs monolithic distributed amplifier in coplanar technology has been developed. The achieved gain is more than 5 dB, the noise figure between 10 - 40 GHz less than 5.5 dB and the return loss is better than 10 dB. The active devices for the amplifier are 0.2 μm recessed gate AlGaAs HEMTs. The chip dimensions are 1.5 mm × 1.5 mm including bias networks.