Large Signal Analysis and Experimental Characteristics of Monolithic InP-Based W-Band HEMT Oscillators

A large signal analysis method for simulating HEMT oscillators has been developed and applied to the design of a monolithic W-band HEMT oscillator. The analysis method uses measured small-signal S-parameters and employs a two-dimensional cubic spline interpolation routine and a harmonic balance technique to perform an accurate device modeling. The monolithic oscillators were fabricated using InAlAs/InGaAs heterostructures on InP substrate. A power level of 1.2 mW at 76.8 GHz was obtained using InAlAs/InGaAs heterostructures on InP substrate out of chips with 0.1 μm × 36 μm HEMT's. Comparisons between theoretical and experimental characteristics are also reported.