C-Band High Efficiency GaAs FET Amplifier with 17.4W Output Power

C-band high efficiency GaAs FET amplifier has been developed for space-craft applications. Power added efficiency 48% is obtained with output power 17.4W and linear gain 11.6dB over 3.7~4.2GHz. This amplifier consists of 4 FET chips and each output power is combined by power combiner matched by 2-stage impedance transformer. This amplifier is designed using measured parameters of fabricated FET chip and these parameters are confirmed by harmonic balance simulation.