Low-Noise, Low DC Power Linear FET

A two-tone third-order output intercept point (OIP3) of 45 dBm has been achieved at 10 GHz with a 280-μm GaAs MBE FET using only 248 mW of DC bias giving an OIP3/P_dc ratio of 128. Noise figure at that bias and tuning was 3.23 dB. Minimum noise figure of the same device was 1.43 dB.