Study of Application Penetrating Surface Method in SEM to Detect IC with Insulator Layer Si3N4+ SiO2

Two novel detectors are developed to detect semiconductor materials and integrated circuits: (1) the electron beam nondestructive microscopic perspective method (detector), the perspective method (detector); (2) the electron beam nondestructive microscopic layered method (detector), the layered method (detector). The novel methods and detectors were applied to scanning electron microscopy (SEM) and a novel instrument is successfully developed, the layered perspective instrument