Fabrication and Characterization of PZT Thin Film Capacitors for MMIC Applications

This paper reports on the use of thin lead zirconate titanate (PZT) films for monolithic microwave integrated circuit (MMIC) capacitors to replace existing materials for better size-reduction. The films were sputtered on Pt/Ti/SiO
₂
coated, undoped silicon wafers. Square Pt electrodes with sides ranging from 10 μm to 50 μm were patterned on the PZT layers to form the capacitors. Results of this study show that PZT thin films can be utilized for efficient size reduction in MMIC. The linewidth obtained for a 50 Ω transmission line is merely 300 nm - this results in a size reduction of approximately five times compared to conventional MMIC. For a 50 × 50 μm
²
electrode area, capacitance values ranging from 5 to 20 pF were obtained at frequencies up to 20 GHz. Suitable de-embedding of S parameters using Cascade microwave probes revealed films with relative permittivities of the order of 100 to 500.