A Broadband FET Amplifier in Integrating Waveguide Technology with an E-Plane Microstrip Insert

This paper describes a broadband low noise waveguide amplifier with a GaAs-FET, combining advantages of a planar technology with advantages of the integrating waveguide technology (INWATE). A new waveguide-to-microstrip transition allows easy assembling, small dimensions, and good electrical behaviour. The design of a single stage X-band amplifier results in a gain of 9 ± 1.3dB over a bandwidth of 3.3 GHz with an associated noise figure of less than 3dB.