Inverted-Gate GaAs Mesfet Characteristics

A non-coplanar MESFET, in which the gate is located at the bottom of the active layer, is studied. Its characteristics are simulated using an accurate two dimensional computer model which takes into account the non-stationary conditons associated with submicron-gate GaAs MESFET's. The potentially interesting characteristics of this device are compared with those of a coplanar structure having the same parameters.