A Quasi-Monolithic Approach to Microwave Ga-As Integrated Circuits

A new class of microwave integrated circuits is presented, having definite advantages over both the hybrid and the fully monolithic solutions. A theoretical analysis correlating the S parameters of a flip-chip mounted FET device with those of a fully monolithic device is then reported, which permits to develop a straightforward and very efficient testing technique for monolithic ICs. Practical examples of the new circuits and of the testing technique are finally described.