X and Ku-Band Dual Gate MESFET Oscillators Stabilized Using Dielectric Resonators

Stable X- and Ku-band oscillators have been realized using GaAs dual gate MESFETs with a geometry of 2 × 0.8 μm × 150 μm. Frequency stability was obtained by coupling the second gate with Ba₂Ti₉0₂₀ dielectric resonators. The design was accomplished by an experimental large signal analysis technique. The achieved output power at 10.8 GHz, 14.2 GHz and 18.05 GHz was 14 to 16 mW and the frequency stability was 0.5 to 4 ppm/K in the -20°C to + 80°C temperature range. Due to critical coupling, the values of Q_ext were between 1000 and 2000. Drain bias pushing at 18.05 GHz was as low as 300 kHz/V.