Deskcomputer Simulation of FET.s Including Non Stationary Electron Dynamics

The aim of this work is to set up a deskcomputer model of FET.s taking into account the non stationary electron dynamics effects which occur when using submicrometer gate devices. For this purpose, explicit analytical formulas of the instantaneous velocity of the carriers are established by fitting the results of a Monte-Carlo simulation. With some assumptions, the Poisson's and continuity equations are solved in the depleted layer and in the conducting channel by means of a discretized method. So, the non stationary electron dynamics influences upon the main characteristics of the FET and upon the device optimization are described.