A Coaxial GaAs FET Oscillator and its Stabilization by a Temperature-Compensated MIC Discriminator

This paper describes a low-Q GaAs FET oscillator design in coaxial form around a pill-packaged commercial device. Bias variation can provide tuning ranges of lGHz in X-and Ku-bands. At X-band 60mW is obtainable at almost 30% efficiency. Temperature-compensated performance has also been evaluated. Stabilization is possible with a microstrip discriminator. It is additionally feasible to temperature compensate this discriminator by means of a simple overlay technique, so providing a predictable, modular arrangement for a stable FET oscillator.