Baritt Impedance from DC Measurements on Wafers

The small-signal impedance of diffused junction BARITTs is obtained by an analytical expression, which depends on the dc differential resistance measured at each bias current directly on the silicon wafer. The impedances computed according to the above procedure are in agreement with published experiments and with microwave measurements carried out by an automatic network analyzer on p+-n-p+ diodes fabricated by us. The method is a fast and reliable test to further process or reject diffused BARITT wafers.