Model for electron redistribution in silicon nitride

The growing importance of nitride-based localised charge-trapping storage has increased the interest in the characterisation of the silicon nitride properties. A new model of the electron motion in the nitride layer is developed, based on Frenkel-Poole detrapping and complete redistribution along the channel. The energy of the traps is evaluated to be around 1.8 eV, with a standard deviation of 0.27 eV. The charge-pumping based extraction of the complete distribution of electrons in the nitride along the channel allows a direct verification of the model. Both high temperature (les 250degC) and high field (|V _G| = 11 V) measurements are in good agreement with the model