The analysis and modeling of on-resistance in high-voltage LDMOS

An analytical method is proposed in order to compute the on-resistance in high-voltage power device LDMOS with structure of deep n-well and fried plate. With the equivalent series circuit of LDMOS resistance presented, by considering the exponential doping distribution in channel, the channel current equation is modified in this paper. In drift region, the resistance is divided into four components due to doping profiles, current performance and device geometries. Finally, the paper deduced analytic on-resistance expression of LDMOS which agrees with the result obtained from two-dimensional simulation