Implementin spatial variation of impurity concentration in MOS transistor modeling

Analytical solution, numerical algorithms and computed curves of D. C. current-voltage characteristics are reported for MOS transistors with spatially varying impurity concentration profile in the basewell-channel region. The second generation industrial-consensus surface-potential approach is used. A family of analytical impurity concentration profiles is studied, including the exponential and Gaussian U-shaped, M-shaped, and L-shaped profiles. The current-voltage characteristics, especially in the subthreshold range, are influenced by the remote electric potential boundary conditions, including the basewell-body contact location, geometry and barrier type, and voltage