Ultrathin Oxynitride p-MOSFET Recovery Characteristics under NBTI Stress

The impact of stress and recovery condition on the recovery of an ultrathin oxynitride p-MOSFET under negative-bias temperature instability (NBTI) stress was investigated in this paper. The positive SiO₂ bulk trap detrapping and the relaxation of Si/SiO₂ interface state was studied through the single point Idlin (drain current) and NFBSILC (near flat-band stress induced leakage current) measurement. The observation of the enhanced relaxation under positive gate bias both in the stress and recovery stages, which play an important role to clarify the existing viewpoint on NBTI recovery characteristics. The different recharging behavior and the substrate voltage dependence reconfirm that the oxide trap relaxation is the major component in NBTI recovery stage