Investigation of irradiation donors in electron irradiated CZ-Si

Behavior of the irradiation donor (ID) after annealing in electron irradiated CZ-Si has been studied by using various kinds of experimental means and the effect of electron doses and oxygen concentration on the formation of ID is discussed. The changes in the resistivity and donor concentration induced by the electron irradiation have been studied using the four point probe measurements at room temperature. Its electric activity originates from the interface state of Si/SiO₂ precipitate and its structure is metastable complex which consists of irradiation defects, silicon, silicon dioxide and carbon