Complimentary Bit Disturb in MirrorBitTM Flash Technology

One of the most important breakthroughs in the area of non-volatile memories is the MirrorBittrade technology, which enables two bits to be stored in a single cell with a simple architecture and manufacturing process. Complimentary bit disturb (CBD), a critical property for MirrorBittrade or dual bit memory, has been followed with wide interest. This paper presents a study of CBD with various cell parameters like channel length, dielectrical layer thickness, and bitline width on MirrorBittrade devices. All experimental data was collected from MirrorBittrade production wafers, which represent the latest flash manufacturing technology