Complete Quasi-Static Modeling of 130nm RF MOSFETs

A complete quasi-static modeling of RF MOSFETs including extrinsic parameters is proposed. All the parameters were obtained by linear regression and analytical equations without complex curve fitting. The extracted results were verified by using the parameters for MOSFET small signal model. Without any fitting or optimization step, the total modeling error of S-parameter was calculated to be only 1.46% up to 20 GHz.