Modeling of the Leakage Current Distribution of 16M Stacked Single Crystal (SC)-like SOI pMOSFETs using Green's function method

An analytical leakage current model is proposed to explain the large magnitude and the broad variation of the leakage current found in the 16M stacked single crystal (SC)-like SOI transistors which have the re-crystallized amorphous-silicon body. This model shows that the parasitic BJT amplification effect should be considered in addition to the trap-assisted tunneling mechanism caused by a randomly located grain boundary and interface traps. Also, the leakage current distribution of the 16M stacked SC-like SOI transistors is analyzed and simulated by utilizing Green's function method