Efficient multi sub-band Monte Carlo simulation of nano-scaled Double Gate MOSFETs

An efficient two-dimensional self-consistent Monte-Carlo simulator including multi sub-band transport in a 2D electron gas is described. This simulator takes into account both out of equilibrium transport and quantization effects. A new algorithm improves significantly computation time and allows us to study the sub-threshold behavior of deep sub-100 nm CMOS devices. We analyze quantization effects in a 15 nm-long DGMOS transistor