High power, high efficiency PHEMTs for use at 8 GHz

Power PHEMTs from 4.8 mm to 14.4 mm gate periphery have been characterized at 8 GHz to study the effect of device scaling on output power, gain, and efficiency. The effect of unit gate width, gate to gate spacing, and substrate thickness on PHEMT performance is also described. A 14.4 mm device delivered 8.09 W with 12.67 dB associated gain and 55.8% PAE under 8 V operation at 8 GHz.<>