Energy Band Parameters in Phosphorus Doped-Carbon/P-Silicon Solar Cell

Phosphorus-doped carbon (n-C) films are deposited on p-type silicon substrate by pulsed laser deposition technique using a camphoric carbon soot target. The band diagram of the n-C/p-Si heterojunction has been constructed from temperature dependence conductivity and optical gap measurements. We have estimated a simple discontinuity in conduction band. The conduction band discontinuity is small (0.04eV), therefore, minority carriers in the second semiconductor will not be impeded from flowing across the junction. Phosphorus doped semiconducting carbon obtained from camphoric carbon soot target on silicon is favourable for solar cell applications is predicted