A Dual-Band VCO Integrated with RF-MEMS Switches and Inductors

The authors propose a dual-band VCO integrated with RF-MEMS devices using flip-chip mounting. A wide frequency band switching capability is realized using low-loss RF-MEMS switches and high-Q inductors to switch one of series-connected inductors. A VCO with RF-MEMS was fabricated and measured. The carrier frequency of the dual-band VCO was tuned from 4.443 to 4.695 GHz and from 5.106 to 5.411 GHz. The phase noise was -103 dBc/Hz at a 1-MHz offset from the carrier frequency of 4.443 GHz