Development of High-Performance Band Pass Filter in the V-Frequency Band using Multilayer MCM-D Technology

Novel system-on-package (SOP)-D technology to improve the mechanical and thermal properties of a MCM-D substrate was suggested. Based on this investigation, the band pass filter for the V-band application with unique circuit and structure was designed and implemented using 2-metals, 3-BCB layers. In the mean while the effective electrical conductivity of metal layer was extracted and its value was 4times10^{7/7 S}m. The insertion loss of band pass filter at 55 GHz was 2.6 dB and group delay was below 0.06 ns. In filter structure, loading capacitor operates as a frequency controller without distortion of inband performance. Suggested MCM-D substrate with band pass filter can be used to evaluate mm-wave system including flip-chip bonded MMIC. In final manuscript, the electrical characteristics of BCB layer upto mm-wave region using ring, T resonator method will be included