On Some Transients in the Pulse Response of Point-Contact Germanium Diodes

Several recovery time effects in germanium point contact diodes are described and a hypothesis is proposed to explain the observed effects. This hypothesis postulates the presence of traps in the germanium p layer near the point electrode. Measurements and computations based on this hypothesis give trap densities of the order of 1016/cm3, trap depths in the energy band of the order of 0.3 electron volts, and capture cross-section diameters for the traps of the order of 0.3 Å.