Erbium-Doped Photonic Crystal Microcavity for Light Extraction Enhancement at 300 K

We present optical characterization of silicon-on-insulator (SOI)-based photonic crystal (PC) microcavities doped with erbium and oxygen. Photoluminescence (PL) is recorded up to the room temperature. A large PL intensity enhancement is obtained compared to the case of identically implanted SOI wafer at 1.54 $\mu$m. Moreover, no temperature-quenching effect is observed.