Fabrication of field effect devices based on YBaCuO/PrBaCuO/YBaCuO junctions

In order to investigate an electric field effect in the junction, the three terminal device was fabricated. When the gate voltage of +2 V (E=7/spl times/10/sup 4/ V/cm) was applied, the drain-source resistance decreased above the temperature of 100 K. However, the electric field effect could not be observed below the temperature of 100 K. Above the temperature of 100 K, it is found that the CuO chain in PBCO behaved itself as a doped semiconductor (acceptor level=26.5 meV).<>