Boron-doped microcrystalline-phase involved amorphous silicon oxide windows prepared by Cat-CVD

Different amounts of oxygen involved boron-doped hydrogenated amorphous silicon (a-Si:H) and hydrogenated microcrystalline silicon (muc-Si:H) deposition were carried out using catalytic chemical-vapor deposition (Cat-CVD) process. Pure silane (SiH₄), hydrogen (H ₂), oxygen (O₂), and diluted diborane (B₂ H₆) gases were used at the deposition pressure of 0.1 to 0.5 Torr. The tungsten catalyst temperature (T_fil) was varied from 1700 to 2100degC. Sample transmittance measurement shows an optical-band gap (Eg_opt) variation from 1.45 to 2.1 eV. X-ray diffraction (XRD) spectra have revealed silicon microcrystalline phases for the samples prepared at the temperature greater than T_fil~1900degC. For the used silicon oxide deposition conditions, no strong tungsten filament degradation was observed after a number of sample preparations