Transient currents in HfO2 and their impact on circuit and memory applications

We investigate transient currents in HfO
₂
dielectrics, considering their dependence on electric field, temperature and gate stack composition. We show that transient currents remain an issue even at very low temperatures and irrespective of the HfO
₂
/SiO
₂
bilayer properties. Finally, we assess their impact on the reliability of precision circuit and memory applications