A fully integrated 3.1-10.6-GHz Ultra-Wideband Low Noise Amplifier for UWB Applications

This paper presents a fully integrated ultra-wideband 3.1-10.6 GHz low noise amplifier (LNA) in a standard 0.25 mum SiGe BiCMOS process. The LNA circuit is a cascade topology with inductively degeneration transistor. A new input impedance matching network based on monolithic transformers was proposed to overcome to the problem of broadband matching without degrading the noise performance and power delivery. The LNA achieves a flat power gain of 14.32dB with an input matching of -9dB over the band, a minimum noise figure (NF) of 2.4-5.7dB across the entire bandwidth, while consuming 9.54mW at 1.8V supply