Die-Based Electromigration Characterization For Copper/Low-K Dual Damascene Interconnects

We demonstrate that electromigration (EM) failure distributions can be determined from multi - link via - chain test structures by the analysis of successive failures of in the chain. Failure distributions from one multi - link structure are consistent with that of conventional single link structure. This approach to testing results in improved defect sensitivity and allows the variation of EM failure characteristics across wafers to be determined.