MZOS storage correlator with modified DRAM cell

A new acoustic monolithic semiconductor storage correlator has been investigated. A detailed description of the architecture and the device operation is presented for an metal-ZnO-oxide-silicon (MZOS) storage correlator with modified DRAM cell. The operation of this device is demonstrated in a common mode. This storage correlator was developed to overcome many limitations of the acoustic convolver and the p-n diode storage correlator. The transconductance parameter S of the sampling MOS transistors is a decisive parameter for a high efficiency of SAW sampling. Calculated results from theory show good performance capabilities