Linearity and Efficiency Performance of GaN HEMTs with Digital Pre-Distortion Correction

The linearity and efficiency performance was studied for large periphery AlGaN/GaN HEMTs. Comparison was made between inherent linear device performance and device performance using digital pre-distortion (DPD) correction. Additionally, both drain voltage and current were optimized to provide high efficiency for a specified linearity. Significant improvements in linear efficiency were achieved using the DPD correction with a best measured PAE of 43.5 %, at a Vd of 28 V, using two carrier W-CDMA