Ultra-Broadband GaAs HIFET MMIC PA

This paper reports the first MMIC using the HIFET (High-Voltage, High-Impedance FET) concept with very broadband power performance and small die size. This GaAs MMIC power amplifier has a gain of 21dB ± 1dB and over 2W of P1dB over the entire 30 MHz to 2.5 GHz frequency band with 20% efficiency, at a bias voltage of +20V. We believe that this is the first MMIC ever reported which achieves this combination of instantaneous bandwidth, output power, and efficiency, within a die size of 4 mm2.