Ultra-High-Speed Low-Noise InP-HEMT Technology

InP-based high electron mobility transistors (InP-HEMTs) with an ultra-high current gain cutoff frequency (f^T) of over 550 GHz and a maximum oscillation frequency (f^max) of 500 GHz are realized. The excellent performance is achieved through lateral and/or vertical device scaling in combination with a reduction of parasitic resistances and capacitances. Key device technologies for ultra-high-speed, low-noise performance are described