A new nonlinear DC and temperature GaAs MESFET model

A new DC nonlinear GaAs MESFET device model is presented. It offers improved accuracy over existing models by simulating the bias dependency of the device transconductance (/spl beta/) and pinch-off point (V/sub TO/) parameters. The effect of these bias dependencies becomes more important as a departure from room temperature is made. New expressions for simulating the temperature dependency of V/sub TO/ and /spl beta/ are presented. These provide improved accuracy over existing techniques. The new model effectively couples together the bias and temperature dependency of the device.<>