Broadband high-efficiency MMIC power amplifiers using ion-implanted MESFET technology

Broadband, high-efficiency MMIC (monolithic microwave integrated circuit) amplifiers have been designed and fabricated using an ion-implanted MESFET technology. In the 7.5- to 18-GHz bandwidth, the amplifier has demonstrated a power-added efficiency of 15 to 34%, averaging greater than 20%. The output power is about 24 dBm at 1-dB compression and 26 dBm at 2-dB compression.<>