Stochastic hopping transport in disordered polymers

A stochastic approach to electronic charge transport in disordered materials based on a hopping mechanism is presented. The field-strength dependence of the space charge evolution is calculated for a defined concentration and distribution of localized levels. The numerical solution procedure and first results, taking into consideration the temperature and field strength of the process, are presented. The influence of the field strength on charge-carrier evolution is seen quantitatively.<>