Read-disturb degradation mechanism due to electron trapping in the tunnel oxide for low-voltage flash memories

This paper describes the degradation of read-disturb characteristics related to time-dependent current caused by electron trapping in tunnel-oxide film. The time-dependent current, rather than the stress-induced leakage current, affects the threshold-voltage shift in memory cells with relatively thick tunnel oxide (>7 nm) and long disturbance time. Programming and erase endurance affects read disturb such that the read-disturb lifetime is improved in memory cells with nitrided oxide which exhibit long-endurance characteristics.<>