Most promising metal-to-metal antifuse based 10 nm-thick p-SiN/sub x/ film for high density and high speed FPGA application

A novel metal-to-metal antifuse has been developed for highly reliable and high performance 3.3 V operated FPGAs. Dielectric breakdown reliability is remarkably improved by using amorphous-like WSi/sub x/ film as a bottom electrode having extremely smooth surface. Sufficient low ON-resistance (8.2 /spl Omega/) and low programming voltage (9 V) can be also obtained in the metal-to-metal antifuses having WSi/sub xSiN/sub x/(10 nm)/TiN structure while keeping sufficient OFF-state reliability. By using WSi/sub x/SiN/sub x/Al-Cu structure, lowest ON-resistance (2 /spl Omega/) can be obtained. These metal-to-metal antifuse structures are very promising for next generation FPGAs.<>