Switching characteristics of a high-temperature 6H-SiC thyristor

Two different 6H-SiC thyristors, one with a 6.5 /spl mu/m n-type blocking layer and the other with a 8 /spl mu/m p-type blocking layer have been fabricated and characterized. The transient switching characteristics of these SiC thyristors were investigated using both optical and electrical gate triggering. A forward breakover voltage of 100 V for the thyristor with the n-type blocking layer and 600 V for the thyristor with p-type blocking layer are reported. The maximum switched current density as high as 2000 A/cm/sup 2/ is demonstrated in the SiC thyristor with n-type blocking layer. The forward breakover voltage of the 100 V thyristor is found to decrease by only 20% when operating temperature is increased from room temperature to 300/spl deg/C, while the rise time increases from 43 ns to 195 ns.<>